features 1 of 4 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems fpd1500 1w power phemt the fpd1500 is an algaas/ingaas pseudomorphic high electron mobility transis- tor (phemt), featuring a 0.25 mx1500 m schottky barrier gate, defined by high - resolution stepper-based photolithography . the recessed gate structure minimizes parasitics to optimize performance. th e epitaxial structure and processing have been optimized for reliable high-power a pplications. the fpd1500 is also available in the low-cost plastic sot89 and dfn packages. ? 29dbm linear output power at 12ghz ? 9db power gain at 12ghz ? 12.5db max stable gain at 12ghz ? 41 dbm o ip3 ? 35% power-added efficiency applications ? narrowband and broadband high-performance amplifiers ? satcom uplink transmitters ? pcs/cellular low-voltage high-efficiency output ampli- fiers ? medium-haul digital radio transmitters rev a1 ds090612 9 package style: bare die fpd15001w power phemt parameter specification unit condition min. typ. max. power at p 1db gain compression 28.5 30.0 dbm v ds =8v, i ds =50% i dss maximum stable gain (s21/s12) 11.5 12.5 db v ds =8v, i ds =50% i dss power gain at p 1db 8.0 9.0 db v ds =8v, i ds =50% i dss pae 45 % v ds =8v, i ds =50% i dss , p out =p 1db oip 3 from 15db to 5db below p 1db 41 dbm v ds =8v, i ds =50% i dss 43 dbm matched for optimal power, tuned for best ip 3 saturated drain-source current (i dss ) 375 465 550 ma v ds =1.3v, v gs =0v maximum drain-source current (i max ) 750 ma v ds =1.3v, v gs +1v transconductance 400 ms v ds =1.3v, v gs =0 v gate-source leakage current (i gso )115 av gs =-5v pinch-off voltage (v p ) |0.7| |1.0| |1.3| v v ds =1.3v, i ds =1.5ma gate-source breakdown voltage (v bdgs ) |12.0| |14.0| v i gs =1.5ma gate-drain breakdown voltage (v bdgd ) |14.5| |16.0| v i gd =1.5ma thermal resistivity ( jc) * 42 c/w v ds >6v note: t ambient =22c, rf specifications measured at f=12ghz using cw signal.
2 of 4 rev a1 ds090612 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd1500 pad layout note: coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. absolute maximum ratings 1 parameter rating unit drain-source voltage (v ds ) (-3v 3 of 4 rev a1 ds090612 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd1500 preferred assembly instructions gaas devices are fragile and should be handled with great care . specially designed collets should be used where possible. the back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. epoxy should be applied to the attachment surface uniformly and sparingly to avoi d encroachment of epoxy onto the top face of the die. ideally it should not exceed half the chip height. for automated disp ense ablestick lmisr4 is reco mmended and for manual dispense ablestick 84-1 lmi or 84-1 lmit are recommended. these should be cured at a temperature of 150 c for one hour in an oven especially set aside for epoxy curing only. if possible the curing oven should be flushed with dry nitrogen. the gold-tin (80% au 20% sn) eutectic die attach has a melting point of approximat ely 280c but the absolute temperature being used depends on the leadframe material used and the particular application. the maximum time at used should be kept to a minimum. this part has gold (au) bond pads requiring the use of gold (99.99% pure) bondwire. it is recommended that 25.4mm diameter gold wire be used. recommended lead bond technique is th ermocompression wedge bonding with 0.001? (25m) diameter wire. bond force, time stage temperature and ultrasonics are al l critical parameters and the settings are dependent on the setup being used and application. ultrasonic or thermosonic bondin g is not recommended. bonds should be made from the die first and then to the mounti ng substrate or package. the physical length of the bondwires should be minimized especially when making rf or ground connections. handling precautions to avoid damage to the devices, care should be exercised during handling. proper electro- static discharge (esd) precautions should be ob served at all stages of storage, handling, assembly, and testing. esd/msl rating these devices should be treated as class 0 (0v to 250v) usin g the human body model as defined in jedec standard no. 22- a114. further information on esd control measures can be fo und in mil-std-1686 and mil-hdbk-263. this is an unpackaged part and therefore no msl rating applies. application notes and design data application notes and design data including s-parameters, nois e paramters, and device model are available on request from www.rfmd.com. reliability an mttf of 4.2 million hours at a channel temperature of 150c is achieved for the process used to manufacture this device. disclaimers this product is not designed for use in any sp ace-based or life-sustaining/supporting equipment. ordering information delivery quantity ordering code full pack (100) FPD1500-000 small quantity (25) FPD1500-000sq sample quantity (3) FPD1500-000s3
4 of 4 rev a1 ds090612 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd1500
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